Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1

Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1Features: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Wafer size: 1" dia x 0. 5 mm thickness (0001) C plane orientation + 0. 5 Deg Polished surface: One side epi polished by special CMP technology Surface roughness: Ra < 5 A ( by AFM) Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal

One support plate

Constant Current & Voltage Discharging

High pressure copper gasket for high vacuum sealing of High Pressure Tube Furnace with Super-alloy Tube up to 1100C @ 700PSI- OTF1200X-HP-55

Professional-grade blades with the continuous rim are designed for lapidary materials

Diameter: 2" +/- 0

Used for 100Ah Li-ion batteries

made of stainless steel 304 with PP sealing O-ring

With real-time monitoring windows and integrated graph/data windows

Ball mill and sieve the powder and apply only the 32~75 micron powder to the pressing die to avoid the damages

The pressing dies are made of 316 stainless steel

uniform temperature zone

Loading Current 3A Package     50 pcs/box   Net Weight 160mg/pcs Gross Wight 18g (Tabs with Box) Application 1