SKU:82759118688

High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L

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Regular price $160885.00 USD
Regular price $160914.00 USD Sale price $160885.00 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000LSpecifications: Purity: > 98. 5% Temperature (Air): 1700C Max. Density: ? 3. 14kg m3 Thermal Conductivity: 160W (m*K) Thermal Expansion Coefficient: 4. 3K 1 x 10 6 Dimension: 50 OD x 38 ID x 1000 L (mm) To get a longer tube service life, please use quartz or alumina crucibles to carry the sample, instead of loading the sample directly inside the tube. Please click the picture below to choose one crucible boat: Inspect your delivery: Please check the

Twist & Turn type tube connectors allows for easy connection and disconnection of tubes

Bismuth telluride crystal substrate is highly oriented crystal ( not  single crystal )

Doping:                                     Si doped

Reciprocating Injection Head and Drum Collector (Pic

Orientation:                      (100) +/- (0

and drum rotation speed

Limit:                              70 centigrade

Tetragonal

2" (50mm ±0

(Note: Updated information on 5/21/2015)

Installation of Mosi2 Heating Element

Conductive type:         Si  N- type As-doped

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Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
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