Al2O3- Sapphire Wafer, R Plane, 3" dia x 0.5mm, 1SP, orientation with 45 degree counter-clockwise from the projection of C-axis onto the R-plane

Al2O3- Sapphire Wafer, R Plane, 3" dia x 0.5mm, 1SP, orientation with 45 degree counter-clockwise from the projection of C-axis onto the R-planeFearures: R plane (1 102) orientation sapphire wafer is being used as a superconductor substrate due to less mis matched lattice and stable chemical and physical properties. Wafer size: 3" dia x 0. 5 mm thickness (1 102) R plane orientation + 0. 5 Deg, orientation with 45 degree counter clockwise from the projection of C axis onto the R plane Polished surface: Wafer surface is EPI polished via a special CMP procedure. One side polished Package: Each

All pressing dies are made of high-stretched carbon steel to achieve high hardness to meet the essential requirements of making ceramic or metal samples

} Material: Polypropylene

APS:             80 nm

1 side polished

alumina fiber must be used to fill the gap between the refractory liner and crucible

5 +/- 1 mm) O

Lattice matched In/Ga alloy layer of N-type InGaAs(undoped)

and SWGL-1600Y Three Zone

Optional:    Rotating heater with speed (0 - 5 RPM) is available upon request at extra cost

Warranty One-year limited warranty with lifetime support

A-plane (11-20) C-Plane (0001) M-Plane (1-100) R-Plane (1-102) Al2O3(10-14)

Gloves are consumable items and are not covered under warranty